The application of silicon photonic technologies to optical telecommunications requires the development of near-infrared detectors monolithically integrated to the Si platform. Most present approaches require the bonding of the semiconductor detector material to the silicon circuitry, which can be time consuming and expensive. While approaches to...

Current commercial and defense electronics are based on Silicon (Si) while most RF and optical sources and detectors are based on III-V and II-VI semiconductors grown on non-Si substrates such as GaAs, InP, InAs, GaSb, and CdZnTe. This partitioning of the substrates poses major obstacles to device integration and restricts the choice of material...

The advent of epitaxial techniques for growing thin films has allowed for the growth of unnatural, metastable structures having properties previously unattainable in equilibrium systems. Specifically, quaternary compounds are of great interest for microelectronic and optoelectronic devices due to expectations that these materials will exhibit the...