Semiconductors have revolutionized the world of
electronics and are found in practically every electronic device currently used.
One of the aspects of semiconductor materials that make them so useful is that
the behavior of a semiconductor can be easily manipulated through doping.
However, with current methods of developing the dopant (SiH3)3P hydride, toxic
and unstable starting materials are needed and effective n-doping has been
traditionally very difficult to achieve by conventional physical and chemical
methods including implantation of solid sources and vapor deposition.
Researchers at Arizona State University have developed a new
single step method to develop the (SiH3)3P hydride used as a practical source
for n-doping of group IV (Si-Ge-Sn) semiconductors. The compound is produced in
high purity quantitative yields via a single-step method based on reactions of
SiH3Br and (Me3Sn)3P that circumvents the need for toxic and unstable starting
materials. In addition the method provides up to 70% yields and offers potential
for industrial scale-up methodology.
Potential Applications
- Silicon based lasers
- Silicon Photonics
- Optical Devices
- Photovoltaics
- Silicon Electronics
Benefits and Advantages
- Starting materials are less toxic and more stable than
alternative approaches
- Allows for industrial scaling
- The Si co-dopant plays an essentially passive role and
does not compromise the device quality of the host material nor does it
fundamentally alter its optical properties
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